Dielectric resonant antenna based NMOSFET terahertz detector and method

ABSTRACT

The present disclosure discloses a dielectric resonant antenna based NMOSFET terahertz detector, comprising an on-chip dielectric resonant terahertz antenna, wherein the on-chip dielectric resonant terahertz antenna is connected to a matching network, the matching network is connected to a source of an NMOSFET, and a gate of the NMOSFET is sequentially connected to a first bias resistor and a first bias voltage, a third transmission line is connected between the first bias resistor and the gate, a drain of the NMOSFET is connected to a first DC blocking capacitor, the other end of the first DC blocking capacitor is connected to a low noise preamplifier, a second bias resistor and a second bias voltage are connected in parallel between the first DC blocking capacitor and the low noise preamplifier, and the low noise preamplifier is further provided with a voltage feedback loop. The present disclosure also discloses a design method for the same.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority to Chinese Patent Application No.201811581762.X filed on Dec. 24, 2018. The content of the aforementionedapplication, including any intervening amendments thereto, areincorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to the field of terahertz technology, andin particular to a dielectric resonant antenna based N-typeMetal-Oxide-Semiconductor Field-Effect Transistor (NMOSFET) terahertzdetector and method.

BACKGROUND

Terahertz (THz) usually refers to electromagnetic waves with a frequencyof 0.1 to 10 THz (wavelength of 0.03 to 3 mm). The long-wavelength bandthereof coincides with the millimeter wave (submillimeter wave), and itsdevelopment mainly relies on electronic science and technology. Theshort-wavelength band thereof coincides with the infrared ray, and itsdevelopment mainly relies on the science of photonics. It can be seenthat the terahertz wave is at the frequency band for the transition frommacro-electronics to micro-photonics. Therefore, it occupies a specialposition in the electromagnetic spectrum, but the electromagnetic wavein the terahertz band has not been fully studied and applied for a longtime due to the lack of effective terahertz radiation generation anddetection methods, and thus is called “THz gap” in the electromagneticspectrum.

Recently, terahertz detection based on NMOSFET has proved to be veryfeasible, but due to complementary metal oxide semiconductor (CMOS)process limitations, the larger loss of conventional terahertz antennassuch as on-chip dipoles and patches in terahertz detectors leads to thesignificantly reduced gain and radiation efficiency of the conventionalterahertz antenna such as on-chip dipoles and patches, which greatlyaffects the detection efficiency and detection sensitivity of theNMOSFET terahertz detector.

At present, the on-chip terahertz antennas in the terahertz detectorsare developing toward low loss, high gain and high radiation efficiency.Thus, developing a new on-chip terahertz antenna based on CMOScompatible process capable of achieving low loss, high gain and highradiation efficiency, is the current research hotspot. At the same time,the biggest difference between the conventional terahertz antenna suchas a on-chip dipole and a patch and the on-chip terahertz dielectricresonant antenna is that the dielectric resonator block in the on-chipterahertz dielectric resonant antenna has low loss characteristics, soit can effectively improve the problem of large loss of the on-chipterahertz antenna. In addition, the dielectric resonant antenna has beenproved to be applicable to the on-chip terahertz antenna design. Theelectromagnetic energy in the space can be coupled to the dielectricresonator block with low loss characteristics through an on-chipstructure, which can effectively improve the problem of large loss ofthe on-chip terahertz antenna, greatly increasing the radiationefficiency and gain of the on-chip terahertz antenna.

The present disclosure innovatively introduces an on-chip dielectricresonant terahertz antenna into an NMOSFET-based terahertz detector, andachieves lower loss of the on-chip terahertz antenna, and higher gainand radiation efficiency of the on-chip terahertz antenna in comparisonwith conventional NMOSFET terahertz detectors based on terahertzantennas such as on-chip dipoles and patches.

SUMMARY

A main object of the present disclosure is to provide an NMOSFETterahertz detector and method based on a dielectric resonant antenna,which is intended to reduce the loss of the on-chip terahertz antennaand improve the gain and radiation efficiency of the on-chip terahertzantenna, improving the detection efficiency and detection sensitivity ofthe NMOSFET terahertz detector.

To achieve the above object, the present disclosure proposes adielectric resonant antenna based NMOSFET terahertz detector, comprisingan on-chip dielectric resonant terahertz antenna, wherein the on-chipdielectric resonant terahertz antenna is connected to a matchingnetwork, the matching network is connected to a source of an NMOSFET, agate of the NMOSFET is sequentially connected to a first bias resistorand a first bias voltage, a third transmission line is connected betweenthe first bias resistor and the gate, a drain of the NMOSFET isconnected to a first Direct Current (DC) blocking capacitor, the otherend of the first DC blocking capacitor is connected to a low noisepreamplifier, a second bias resistor and a second bias voltage arefurther connected in parallel between the first DC blocking capacitorand the low noise preamplifier, and the low noise preamplifier isfurther provided with a voltage feedback loop.

Preferably, the on-chip dielectric resonant terahertz antenna comprisesan on-chip H-shaped slot structure and a rectangular dielectricresonator block connected to the on-chip H-shaped slot structure at thesurface by an insulating adhesive layer.

Preferably, the on-chip H-shaped slot structures are formed on a surfaceof an integrated process top layer metal and is located within a metalcavity formed by stacking intermediate layer metals, other than theintegrated process top layer metal and an integrated process bottomlayer metal in an integrated process, and metal vias.

Preferably, the on-chip H-shaped slot structure comprises a leftvertical slot and a right vertical slot arranged in parallel, oppositesides of the left vertical slot and the right vertical slot areconnected to an inverted L-shaped left side slot and right side slot,respectively.

Preferably, a horizontal portion of the left side slot is connected inthe middle of the left vertical slot, a horizontal portion of the rightside slot is connected in the middle of the right vertical slot, andvertical portions of the left side slot and the right side slot areparallel to each other and constitute two lead-out slots for connectingthe antenna to an outside structure.

Preferably, the matching network comprises a first transmission lineconnected to the on-chip dielectric resonant terahertz antenna and thesource respectively at both ends, a middle portion of the firsttransmission line is connected to one end of a second transmission line,and the other end of the second transmission line is grounded.

Preferably, the voltage feedback loop comprises a first resistorconnected to two ends of the low noise preamplifier, a left end of thefirst resistor connected to a negative terminal of the low noisepreamplifier is sequentially connected to a second resistor, a second DCblocking capacitor and the ground, and a right end of the first resistoris also sequentially connected to a third DC blocking capacitor and theground.

The present disclosure further proposes a method of designing theon-chip dielectric resonant terahertz antenna, comprising steps of:

S1: with a resonance mode being in TE_(m,δ,n) mode, calculating 3Ddimensions of the rectangular dielectric resonator block by solving atranscendental equation, the transcendental equation being:

$\begin{matrix}{{k_{y}\mspace{14mu}{\tan\left( \frac{k_{y}W_{DRA}}{2} \right)}} = \sqrt{{\left( {ɛ_{r} - 1} \right)k_{mn}^{2}} - k_{y}^{2}}} & (1)\end{matrix}$where c is the speed of light, and f_(mn) is the operating frequency ofthe rectangular dielectric resonator block in this mode;

S2: in a process of designing an on-chip excitation structure, selectinga top layer metal Metal6 to design this slot structure while selecting abottom layer metal Metal1 as a metal base plate, and stackingintermediate metal layers and metal vias to form a metal shieldingcavity around the H-shaped slot structure;

S3: selecting a suitable insulating adhesive layer to combine therectangular dielectric resonator block and the on-chip H-shaped slotstructure;

S4: simulating the on-chip dielectric resonant terahertz antenna byusing high frequency structure simulation analysis software.

Preferably, in the S1, the resonance mode of the rectangular dielectricresonator block is selected to be TE_(1,δ,3) mode of high-order resonantmodes, and the transcendental equation is solved by programming withmathematical software Matlab, to obtain the 3D dimensions of therectangular dielectric resonator block at a frequency of 300 GHz beingW_(DR)=250 μm, L_(DR)=250 μm, H_(DR)=400 μm, respectively; in the S2,the dimensions of the H-shaped slot structure are I₁=70 μm, I₂=220 μm,w_(s)=9.5 μm, w₁=15 μm, w₂=10 μm, w₃=10 μm; and the insulating adhesivelayer is selected as a thermal stability insulating adhesive having arelative dielectric constant of 2.4 and a thickness of 10 μm; and thehigh frequency structure simulation analysis software is HFSS.

Preferably, in the transcendental equation of the S1,

$\begin{matrix}{{k_{mn} = \frac{2\pi\; f_{mn}}{c}},{k_{x} = {m\frac{\pi}{L_{DRA}}}},{k_{z} = {n\frac{\pi}{2H_{DRA}}}},{{k_{x}^{2} + k_{y}^{2} + k_{z}^{2}} = {ɛ_{r}k_{mn}^{2}}}} & (2)\end{matrix}$

The technical solution according to the present disclosure has thefollowing advantages over the prior art.

The technical problem to be solved by the technical solution of thepresent disclosure is that the on-chip terahertz antenna existing in theexisting terahertz detector has large loss, low gain and radiationefficiency, and the like. The technical solution of the presentdisclosure combines a rectangular dielectric resonator block inTE_(1,δ,3) mode of high-order modes with low loss characteristics and anon-chip slot feed structure, thereby effectively overcoming thetechnical problems of low gain and radiation efficiency, and large lossin designing an on-chip terahertz antenna. Compared with theconventional NMOSFET terahertz detectors based on terahertz antennassuch as on-chip dipoles and patches, the dielectric resonant antennabased NMOSFET terahertz detector proposed by the present disclosureachieves lower loss for the on-chip terahertz antenna, and higher gainand radiation efficiency for the on-chip terahertz antenna, therebyeffectively improving the detection efficiency and detection sensitivityof the NMOSFET terahertz detector.

In addition, the output voltage signal of the technical solutionaccording to the present disclosure is a DC voltage signal, and themagnitude of the DC voltage signal is proportional to the radiationintensity of the terahertz signal, so that the intensity information ofthe incident terahertz signal can be conveniently obtained according tothe magnitude of the output voltage signal of the terahertz detector,ultimately achieving a terahertz detection with high accuracy.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the technical solutions inembodiments of the present disclosure or the prior art, the accompanyingdrawings needed to be used in the description of the embodiments or theprior art will be briefly described below. Obviously, the accompanyingdrawings in the following description are only some embodiments of thepresent disclosure, and other accompanying drawings can be obtained byordinary persons skilled in the art from the structures illustrated inthese accompanying drawings without any inventive efforts.

FIG. 1 is a schematic structural view of a dielectric resonant antennabased NMOSFET terahertz detector according to the present disclosure;

FIG. 2 is a schematic structural view of an on-chip dielectric resonantterahertz antenna according to the present disclosure;

FIG. 3 is a schematic structural view of a rectangular dielectricresonator block according to the present disclosure;

FIG. 4 is a schematic structural view of an on-chip H-shaped slotstructure according to the present disclosure;

FIG. 5 is a graph showing the return loss S11 of an on-chip dielectricresonant terahertz antenna according to the present disclosure as afunction of frequency;

FIG. 6 is a graph showing the gain of an on-chip dielectric resonantterahertz antenna according to the present disclosure as a function offrequency;

FIG. 7 is a radiation pattern of an on-chip dielectric resonantterahertz antenna according to the present disclosure.

DESCRIPTION OF THE REFERENCE NUMERALS

No. Name No. Name 1 First bias voltage 43 Rectangular dielectric 2 Firstbias resistor resonator block 3 NMOSFET 44 Top layer metal 31 Source 5Matching network 32 Drain 51 First transmission line 33 Gate 52 Secondtransmission 4 On-chip dielectric line resonant 6 First DC blockingterahertz capacitor antenna 7 Second bias voltage 41 On-chip H-shaped 8Second bias resistor slot structure 9 Low noise preamplifier 411 Leftvertical slot 10 First resistor 412 Right vertical slot 11 Secondresistor 413 Left side slot 12 Second DC blocking 414 Right side slotcapacitor 415 Metal cavity 13 Grounding 416 Bottom layer 14 Third DCblocking metal capacitor 42 Insulating adhesive 15 Third transmissionlayer line

The implementation, functional features and advantages of the presentdisclosure will be further described in the light of embodiments withreference to the accompanying drawings.

DETAILED DESCRIPTION

The technical solutions according to the embodiments of the presentdisclosure are clearly and completely described in the following withreference to the accompanying drawings of the embodiments of the presentdisclosure. Obviously, the described embodiments are only a part of theembodiments of the present disclosure, and not all the embodiments. Allother embodiments obtained by ordinary persons skilled in the art basedon the embodiments of the present disclosure without creative effortsare within the scope of the present disclosure.

It should be noted that if there is a directional indication (such asup, down, left, right, front, back, . . . ) mentioned in the embodimentsof the present disclosure, the directional indication is only used toexplain the relative positional relationship between components, motionstatus, and the like in a specific posture (as shown in the drawing),and if the specific posture changes, the directional indication alsochanges accordingly.

In addition, if there is a description of “first”, “second”, etc. in theembodiments of the present disclosure, the description of the “first”,“second”, etc. is used for the purpose of illustration only, and is notto be construed as an its relative importance or implicit indication ofthe number of technical features indicated. Thus, the features definedby “first” or “second” may include at least one of the features, eitherexplicitly or implicitly. In addition, the technical solutions among thevarious embodiments may be combined with each other, but must be basedon the enablement of those skilled in the art, and when the combinationof the technical solutions is contradictory or impossible to implement,it should be considered that such combination of the technical solutionsdoes not exist, and is not within the scope of protection claimed by thepresent disclosure.

The present disclosure proposes a dielectric resonant antenna basedNMOSFET terahertz detector and a design method for the on-chipdielectric resonant terahertz antenna.

Referring to FIG. 1, in an embodiment of the present disclosure, thedielectric resonant antenna based NMOSFET terahertz detector comprisesan on-chip dielectric resonant terahertz antenna 4. The on-chipdielectric resonant terahertz antenna 4 is connected to a matchingnetwork 5, and the matching network 5 is further connected to a source31 of an NMOSFET 3. A gate 33 of the NMOSFET 3 is sequentially connectedto a first bias resistor 2 and a first bias voltage 1. An open-endquarter-wavelength third transmission line 15 is connected between thegate 33 and the first bias resistor 2. A drain 32 of the NMOSFET 3 isconnected to a first DC blocking capacitor 6, and the other end of thefirst DC blocking capacitor 6 is connected to a low noise preamplifier9. A second bias resistor 8 is connected between the first DC blockingcapacitor 6 and the low noise preamplifier 9, and the other end of thesecond bias resistor 8 is connected to the first bias voltage 7 so as toprovide a DC power supply to the low noise preamplifier 9. In addition,the low noise preamplifier 9 is also connected to a voltage feedbackloop.

Referring to FIG. 2 to FIG. 4, specifically, the on-chip dielectricresonant terahertz antenna 4 of the present embodiment comprises anon-chip H-shaped slot structure 41 and a rectangular dielectricresonator block 43, and the rectangular dielectric resonator block 43 isdisposed on a surface of the on-chip H-shaped slot structure 41 throughthe insulating adhesive layer 42. The on-chip H-shaped slot structure 41of the present embodiment is formed on a surface of an integratedprocess top layer metal 44 and is located within a metal cavity 415formed by stacking intermediate layer metals, other than the integratedprocess top layer metal 44 and an integrated process bottom layer metal416 in an integrated process, and metal vias.

Referring to FIG. 4, more specifically, the on-chip H-shaped slotstructure 41 of the present embodiment comprises a left vertical slot411 and a right vertical slot 412 arranged in parallel, opposite sidesof the left vertical slot 411 and the right vertical slot 412 areconnected to an inverted L-shaped left side slot 413 and right side slot414, respectively, a horizontal portion of the left side slot 413 isconnected in the middle of the left vertical slot 411, and a horizontalportion of the right side slot 414 is connected in the middle of theright vertical slot 412. Additionally, vertical portions of the leftside slot 413 and the right side slot 414 are parallel to each other andconstitute two lead-out slots for connecting the antenna to an outsidestructure.

Preferably, the on-chip H-shaped slot structure 41 of the presentembodiment is designed and processed using a silicon-based process so asto excite the rectangular dielectric resonator block 43 overlying it andoptimize the impedance matching effect. In addition, the insulatingadhesive layer 42 has good thermal stability for fixing the rectangulardielectric resonator block 43 to a surface of the on-chip excitationstructure.

More preferably, the rectangular dielectric resonator block 43 of thepresent embodiment has a larger relative dielectric constant, forexample, a relative dielectric constant of >5, so that the insulatingmaterial is processed into a specific size to couple and radiate anelectromagnetic field to the space. In addition, the rectangulardielectric resonance mode of the present embodiment is a TE_(1,δ3) mode.In this embodiment, the center frequency of the on-chip dielectricresonant terahertz antenna 4 is 300 GHz, and magnesium oxide having arelative dielectric constant of 9.65 is selected as the material of therectangular dielectric resonator block. A parameter (Towerjazz SBC18H3)of the 0.18mGeSi BiCMOS process is selected to design the on-chipstructure, and there are six layers of metal Metal1-Metal6 and fivelayers of metal vias Via1-Via5 in this process.

The matching network 5 of the present embodiment is composed of twomicrostrip transmission lines, the first transmission line 51 and thesecond transmission line 52. The matching network 5 is mainly used toimprove the power transmission efficiency between the antenna and thetransistor, and a DC power supply is provided for the source (S) of thetransistor. The left end of the microstrip first transmission line 51 isconnected to the on-chip dielectric resonant terahertz antenna 4, andthe right end of the microstrip first transmission line 51 is connectedto the source 31 of the NMOSFET 3.

The gate 33 of the NMOSFET 3 of the present embodiment is loaded with afixed first bias voltage 1 and a first bias resistor 2, and an open-endquarter-wavelength third transmission line 53 is connected between thegate 33 of the NMOSFET and the first bias resistor 2. The open-endquarter-wavelength third transmission line 53 is mainly used toeliminate the influence of the gate DC bias on the impedance matchingbetween the antenna and the transistor.

In the present embodiment, a first DC blocking capacitor 6, a secondbias voltage 7, and a second bias resistor 8 are connected between thedrain 32 of the NMOSFET 3 and the forward input terminal of the lownoise preamplifier 9, wherein the second bias voltage 7 and the secondbias resistor 8 are used for supplying power to the low noisepreamplifier 9.

The voltage feedback loop of the low noise preamplifier 9 of the presentembodiment is mainly composed of the first resistor 10, the secondresistor 11, the second DC blocking capacitor 12 and the third DCblocking capacitor 14, wherein the gain of the low noise preamplifier 9can be adjusted by changing the resistance values of the first resistor10 and the second resistor 11.

Referring to FIG. 1 to FIG. 7, the design of the on-chip dielectricresonant terahertz antenna specifically comprises the following designsteps.

1. Design of rectangular dielectric resonator block 43. The resonantmode is in TE_(1,δ,n) mode, and the dimensions of the rectangulardielectric resonator block 43 as shown in FIG. 3 can be calculated bysolving the transcendental equation (1):

$\begin{matrix}{{k_{y}\mspace{14mu}{\tan\left( \frac{k_{y}W_{DRA}}{2} \right)}} = \sqrt{{\left( {ɛ_{r} - 1} \right)k_{mn}^{2}} - k_{y}^{2}}} & (1) \\{{k_{mn} = \frac{2\pi\; f_{mn}}{c}},{k_{x} = {m\frac{\pi}{L_{DRA}}}},{k_{z} = {n\frac{\pi}{2H_{DRA}}}},{{k_{x}^{2} + k_{y}^{2} + k_{z}^{2}} = {ɛ_{r}k_{mn}^{2}}}} & (2)\end{matrix}$where Equations (2) is the explanation for parameters of the equation(1), wherein c is the speed of light, and f_(mn) is the operatingfrequency of the rectangular dielectric resonator block in this mode.The TE_(1,δ,3) mode of high-order resonant modes is selected as theresonant mode of the rectangular dielectric resonator block 43 in theembodiment of the present disclosure, and has a higher gain than thebase mode. The transcendental equation (1) is solved by programming withthe mathematical software Matlab, obtaining the dimensions of therectangular dielectric resonator block 43 at 300 GHz as: W_(DR)=250 μm,L_(DR)=250 μm, H_(DR)=400 μm.

2. Design of on-chip excitation structure. The on-chip H-shaped slotstructure 41 is shown in FIG. 4. In the design process, the top layermetal Metal6 is selected to design the slot structure, while the bottomlayer metal Metal1 is selected as the metal base plate to suppress theelectromagnetic wave from propagating toward a high-loss siliconsubstrate, and the intermediate metal layer and metal vias are stackedto form a metal shield cavity around the H-shaped slot structure, tosuppress electromagnetic leakage and reduce loss.

The dimension parameters of the H-shaped slot structure are:

-   -   l₁=70 μm, l₂=220 μm, w_(s)=9.5 μm, w₁=15 μm, w₂=10 μm, w₃=10 μm

3. Selection of the insulating adhesive layer 42. The insulatingadhesive layer 42 is made of a thermally stable insulating adhesivehaving a relative dielectric constant of 2.4 and a thickness of 10 μm,for bonding the rectangular dielectric resonator block 43 and theon-chip H-shaped slot structure 41.

4. Simulating the on-chip dielectric resonant terahertz antenna by usinghigh frequency structure simulation analysis software (HFSS). FIG. 5shows the return loss S11 of the on-chip dielectric resonant terahertzantenna 4 as a function of frequency, where the impedance matchingbandwidth of the on-chip dielectric resonant terahertz antenna array at−10 dB is 15.2% (273-318 GHz). FIG. 6 shows the gain of the on-chipdielectric resonant terahertz antenna 4 as a function of frequency,where the peak gain of the on-chip dielectric resonant terahertz antenna4 is 5.77 dBi and the gain bandwidth at 3 dB is 13.7% (270-310 GHz). Theradiation pattern of the on-chip dielectric resonant terahertz antennais shown in FIG. 7, where the radiation efficiency of the dielectricresonant antenna is 71%.

The output voltage signal of the dielectric resonant antenna basedNMOSFET terahertz detector of the technical solution according to thepresent disclosure is a DC voltage signal, and the magnitude of the DCvoltage signal is proportional to the radiation intensity of theterahertz signal, so that the intensity information of the incidentterahertz signal can be obtained according to the magnitude of theoutput voltage signal of the terahertz detector, thereby realizingterahertz detection.

The above is only a preferred embodiment of the present disclosure,which is not intended to limit the scope of the disclosure. Allequivalent structural alterations made by using the disclosure of thepresent specification and drawings, or directly or indirectly utilizedin other related technical fields, in the concept of the presentdisclosure, are encompassed within the scope of patent protection of thepresent disclosure.

What is claimed is:
 1. A dielectric resonant antenna based N-typeMetal-Oxide-Semiconductor Field-Effect Transistor (NMOSFET) terahertzdetector comprising an on-chip dielectric resonant terahertz antenna,wherein the on-chip dielectric resonant terahertz antenna is connectedto a matching network, the matching network is connected to a source ofan NMOSFET, wherein the matching network comprises a first transmissionline connected to the on-chip dielectric resonant terahertz antenna andthe source respectively at both ends, a middle portion of the firsttransmission line is connected to one end of a second transmission line,and the other end of the second transmission line is grounded, wherein agate of the NMOSFET is sequentially connected to a first bias resistorand a first bias voltage, a third transmission line is connected betweenthe first bias resistor and the gate, a drain of the NMOSFET isconnected to a first Direct Current (DC) blocking capacitor, the otherend of the first DC blocking capacitor is connected to a low noisepreamplifier, a second bias resistor and a second bias voltage arefurther connected in parallel between the first DC blocking capacitorand the low noise preamplifier, and the low noise preamplifier isfurther provided with a voltage feedback loop.
 2. The dielectricresonant antenna based NMOSFET terahertz detector of claim 1, whereinthe on-chip dielectric resonant terahertz antenna comprises an on-chipH-shaped slot structure and a rectangular dielectric resonator blockconnected to the on-chip H-shaped slot structure at the surface by aninsulating adhesive layer.
 3. The dielectric resonant antenna basedNMOSFET terahertz detector of claim 2, wherein the on-chip H-shaped slotstructures are formed on a surface of an integrated process top layermetal and is located within a metal cavity formed by stackingintermediate layer metals, other than the integrated process top layermetal and an integrated process bottom layer metal in an integratedprocess, and metal vias.
 4. The dielectric resonant antenna basedNMOSFET terahertz detector of claim 3, wherein the on-chip H-shaped slotstructure comprises a left vertical slot and a right vertical slotarranged in parallel, opposite sides of the left vertical slot and theright vertical slot are connected to an inverted L-shaped left side slotand right side slot, respectively.
 5. The dielectric resonant antennabased NMOSFET terahertz detector of claim 4, wherein a horizontalportion of the left side slot is connected in the middle of the leftvertical slot, a horizontal portion of the right side slot is connectedin the middle of the right vertical slot, and vertical portions of theleft side slot and the right side slot are parallel to each other andconstitute two lead-out slots for connecting the antenna to an outsidestructure.
 6. The dielectric resonant antenna based NMOSFET terahertzdetector of claim 1, wherein the voltage feedback loop comprises a firstresistor connected to two ends of the low noise preamplifier, a left endof the first resistor connected to a negative terminal of the low noisepreamplifier is sequentially connected to a second resistor, a second DCblocking capacitor and the ground, and a right end of the first resistoris also sequentially connected to a third DC blocking capacitor and theground.